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APTC80A10SCTG
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
NTC2 VBUS Q1
VDSS = 800V RDSon = 100m max @ Tj = 25C ID = 42A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G1 O UT S1 Q2
G2
0/VBU S S2 NTC1
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
OUT VBUS OUT
0/ VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 800 42 32 168 30 100 416 17 0.5 670 Unit V A V m W A mJ
July, 2006 1-7 APTC80A10SCTG - Rev 2
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC80A10SCTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
3
Max 75 750 100 3.9 175
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 42A Inductive switching @ 125C VGS = 15V VBus = 533V ID = 42A R G = 1.8 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 42A, R G = 1.8 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 42A, R G = 1.8
Min
Typ 6761 3137 161 273 36 138 10 13 83 35 437 417 765 513
Max
Unit pF
nC
ns
J J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 250 500
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 24 48 33 150
1 ns nC
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
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2-7
APTC80A10SCTG - Rev 2
July, 2006
30 1.1 1.05
1.15 V
APTC80A10SCTG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 200 400 20 1.6 2.6 56 180 132 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.3 1.2 0.8 150 125 100 4.7 160 Typ 50 3952 Max Max 800 4000 1.8 3.0 Unit V A A V nC pF
IF = 20A, VR = 600V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit k K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
RT =
R 25
SP4 Package outline (dimensions in mm)
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
AL L DIME NSIONS MA RKED " * " A RE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-7
APTC80A10SCTG - Rev 2
July, 2006
APTC80A10SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 ID, Drain Current (A) ID, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 50 60 70 80 90 I D, Drain Current (A)
VGS=20V VGS=10V
Transfert Characteristics 150
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle T J=-55C
VGS=15&10V
6.5V 6V 5.5V 5V 4.5V 4V
120 90 60 30 0 0
TJ =125C TJ =25C TJ =125C T J=-55C
1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 45 I D, DC Drain Current (A) 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
July, 2006 4-7 APTC80A10SCTG - Rev 2
Normalized to V GS=10V @ 21A
TC, Case Temperature (C)
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APTC80A10SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss Crss 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 21A
100
limited by RDSon
100s
10
1ms
1
Single pulse TJ =150C TC=25C 1
100ms
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 Gate Charge (nC)
July, 2006
VDS=640V ID=42A T J=25C V DS =160V VDS=400V
10000
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTC80A10SCTG - Rev 2
APTC80A10SCTG
Delay Times vs Current Rise and Fall times vs Current
100
t d(off) td(on) and td(off) (ns)
50 40
t r and tf (ns)
V DS=533V RG=1.8 T J=125C L=100H
80 60 40 20 0 20 30 40 50 60 I D, Drain Current (A) 70
tf
30 20 10 0 20
V DS=533V RG=1.8 T J=125C L=100H
tr
t d(on)
30
40 50 60 I D, Drain Current (A)
70
Switching Energy vs Current
Switching Energy vs Gate Resistance
1.6
Eon and Eoff (mJ)
Switching Energy (mJ)
1.2
VDS=533V RG=1.8 TJ=125C L=100H
3 Eon 2.5 2 1.5 1 0.5 0
V DS=533V ID=42A T J=125C L=100H
Eoff
0.8 Eoff 0.4
Eon Eoff
0 20 30 40 50 60 ID, Drain Current (A) 70
0
2.5
5
7.5
10
12.5
15
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current
350
Frequency (kHz)
300 250 200 150 100 50 0 10 15
Hard switching ZCS
VDS=533V D=50% RG=1.8 T J=125C T C=75C
IDR , Reverse Drain Current (A)
400
100
TJ=150C
ZVS
10
T J=25C
1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V)
July, 2006
20 25 30 35 ID, Drain Current (A)
40
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6-7
APTC80A10SCTG - Rev 2
APTC80A10SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.7 0.5 0.9
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
40
I F Forward Current (A)
800
IR Reverse Current (A)
30 20
TJ=75C
600 400 200 0 400
T J=125C
T J=75C T J=125C T J=175C T J=25C
10 0 0 0.5 1 1.5 2
TJ=175C
2.5
3
3.5
600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 1000 1200 1400 1600 VR Reverse Voltage (V)
1600 C, Capacitance (pF) 1200
800 400 0 1
July, 2006 APTC80A10SCTG - Rev 2
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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